Sung Joo Hong

4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

Seoung-Ju Chung, T. Kishi, Jung Wook Park et al. · 2016 · 139 citations

Spintronics, Magnetism, Electrical Engineering +15

Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Hyung Dong Lee, S. G. Kim, K. Cho et al. · 2012 · 64 citations

Materials Science, Memory Operation, Electrical Engineering +15

Fast-chargeable N-doped multi-oriented graphitic carbon as a Li-intercalation compound

Yun Ji Oh, Jae Hui Park, Jae Seo Park et al. · Energy storage materials · 2021 · 43 citations

Materials Science, Engineering, Carbon-based Material +6

Highly productive PCRAM technology platform and full chip operation: Based on 4F²(84nm pitch) cell scheme for 1 Gb and beyond

S.H. Lee, H.C. Park, M.S. Kim et al. · 2011 · 37 citations

Full Chip Operation, Electrical Engineering, Chip Size +13

Engineering of ferroelectric switching speed in Si doped HfO<inf>2</inf> for high-speed 1T-FERAM application

Hyokyung Yoo, J. S. Kim, Zhongwei Zhu et al. · 2017 · 37 citations

Magnetic Properties, Engineering, Grain Size +17