Dong-Joon Kim - Concepedia

Author

Dong-Joon Kim

Gwangju Institute of Science and Technology ORCID

Also Known As

Dong-Joon Kim

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology Samsung (South Korea)Korea Electrotechnology Research Institute Chonnam National University

About

Dong-Joon Kim is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	30	1.3K
2	Applied Physics	19	26	1.2K
3	Chemical Engineering	4	4	85
4	Natural Sciences	1	1	19
5	Chemistry	1	1	19

Dong-Joon Kim

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes Sangheon Han, Dong-Yul Lee, Sang‐Jun Lee, Applied Physics Letters Electrical EngineeringSolid-state LightingEngineeringHole Injection EfficiencyInjection Current Density	2009	303
Modeling of a GaN-based light-emitting diode for uniform current spreading Hyunsoo Kim, Ji‐Myon Lee, Chul Huh, Applied Physics Letters Electrical EngineeringSolid-state LightingEngineeringCurrent DensityApplied Physics	2000	95
Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells Yong‐Tae Moon, Dong-Joon Kim, Keun-Man Song, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringNanoelectronicsCompound Semiconductor	2001	88
Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer Chul Huh, Ji‐Myon Lee, Dong-Joon Kim, Journal of Applied Physics Light-output EfficiencyPhotonicsElectrical EngineeringSolid-state LightingEngineering	2002	80
Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots Yong-Tae Moon, Dong-Joon Kim, Jin-Sub Park, Applied Physics Letters Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringIn-rich Quantum Dots	2001	73
Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots Il-Kyu Park, Min‐Ki Kwon, Seong‐Ho Baek, Applied Physics Letters EngineeringColloidal NanocrystalsIngan LayerSemiconductor NanostructuresSemiconductors	2005	63
Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes Sangheon Han, Dong-Yul Lee, Hyunwook Shim, Applied Physics Letters SemiconductorsElectrical EngineeringElectronic DevicesReverse VoltageEngineering	2013	47
A Practical Approach to HVDC System Control for Damping Subsynchronous Oscillation Using the Novel Eigenvalue Analysis Program Dong-Joon Kim, Hae-Kon Nam, Young-Hwan Moon IEEE Transactions on Power Systems Supplementary ControlPositive Damping TorqueElectrical EngineeringEngineeringPractical Approach	2007	45
Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes Ji‐Myon Lee, Chul Huh, Dong-Joon Kim, Semiconductor Science and Technology Electrical EngineeringSolid-state LightingEngineeringCl2-base PlasmaApplied Physics	2003	40
Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells Dong-Joon Kim, Yong-Tae Moon, Keun-Man Song, Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2001	39

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