Hyoung-Do Kim

Effects of Fluorine Doping on the Electrical Performance of ZnON Thin-Film Transistors

Hyoung-Do Kim, Jong Heon Kim, Hyun‐Suk Kim et al. · ACS Applied Materials & Interfaces · 2017 · 31 citations

Engineering, Materials Engineering, Materials Science +17

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(<i>p</i>-xylylene) Derivatives

Jae Hyun Kim, Seong Cheol Jang, Kihyeon Bae et al. · ACS Applied Materials & Interfaces · 2021 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +17

Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor

Hyoung-Do Kim, Hyoung-Do Kim, Jong Heon Kim et al. · ACS Applied Materials & Interfaces · 2018 · 22 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties

Seong Cheol Jang, Jozeph Park, Hyoung-Do Kim et al. · AIP Advances · 2019 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Amorphous Mixture of Two Indium-Free BaSnO₃ and ZnSnO₃ for Thin-Film Transistors with Balanced Performance and Stability

Ho‐Hyun Nahm, Hyoung-Do Kim, Hyoung-Do Kim et al. · ACS Applied Materials & Interfaces · 2019 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17