Zhijian Yang

Luminescence degradation of InGaN/GaN violet LEDs

Tongjun Yu, Shuping Shang, Zhizhong Chen et al. · Journal of Luminescence · 2006 · 19 citations

Electrical Engineering, Solid-state Lighting, Engineering +5

Stress control and dislocation reduction in the initial growth of GaN on Si (111) substrates by using a thin GaN transition layer

Kun Wang, Mengda Li, Zhijian Yang et al. · CrystEngComm · 2019 · 18 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

Hao Long, Wei Yang, Tongjun Yu et al. · CrystEngComm · 2012 · 17 citations

Materials Science, Wide-bandgap Semiconductor, Electronic Devices +13

Stimulated emission in GaN-based laser diodes far below the threshold region

Ding Li, Hua Zong, Wei Yang et al. · Optics Express · 2014 · 14 citations · Full text

Gan-based Laser Diodes, Photonics, Electrical Engineering +12

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Min Lü, Xin Chang, Zilan Li et al. · Chinese Physics Letters · 2003 · 14 citations

Engineering, Gan Films, Mixed Acid Solution +16