Taewook Kim

Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

Yeonsu Jeong, Han Joo Lee, Jun-Kyu Park et al. · npj 2D Materials and Applications · 2022 · 51 citations · Full text

Electron Density, Electrical Engineering, Non-volatile Memory +13

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Taewook Kim, Donghee Kang, Yangjin Lee et al. · Advanced Functional Materials · 2020 · 40 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

A 20-Gb/s Transformer-Based Current-Mode Optical Receiver in 0.13- $\mu\hbox{m}$ CMOS

Jungwon Han, Boo-Young Choi, Mikyung Seo et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 2010 · 33 citations

Photonics, Engineering, Optical Amplification +11

Negative Photoresponse Switching via Electron–Hole Recombination at The Type III Junction of MoTe₂ Channel/SnS₂ Top Layer

Yeonsu Jeong, Taewook Kim, Hyunmin Cho et al. · Advanced Materials · 2023 · 26 citations

Self-Assembled TaO_X/2H-TaS₂ as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga₂O₃ Transistor

Ki‐Tae Kim, Taewook Kim, Yeonsu Jeong et al. · ACS Nano · 2023 · 18 citations