21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T527,InGaAsP double shallow ridge rectangular ring laser photonics integration circuits have been successfully fabricated by cascade etching technique. Varied thresholds with coupling current I _c and coupling length L _c are observed. The lowest threshold current of 75 mA, including I _c and I _d , at I _c = 30 mA in the device of L _c = 300 mum is obtained. The device of L _c = 200 mum exhibits single-mode operation with sidemode suppression ratio = 15 dB and Q = 6513 just beyond the threshold. The cascade etching technique is of interest for fabrication of other multilayer monolithic photonic integration circuits.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	11
2	Applied Physics	1	1	11
3	Electrical Engineering	1	1	11
4	Physics	1	1	11
5	High-power Lasers	1	1	11

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