I. V. Rozhansky

Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

I. V. Rozhansky, D. A. Zakheim · physica status solidi (a) · 2007 · 190 citations

Wide-bandgap Semiconductor, Engineering, Injection Efficiency +21

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

I. V. Rozhansky, D. A. Zakheim · Semiconductors · 2006 · 96 citations

Helicity-Driven Ratchet Effect Enhanced by Plasmons

I. V. Rozhansky, V. Yu. Kachorovskii, M. S. Shur · Physical Review Letters · 2015 · 60 citations

Plasmonics, Spintronics, Engineering +9

General theory of the topological Hall effect in systems with chiral spin textures

K. S. Denisov, I. V. Rozhansky, N. S. Averkiev et al. · Physical review. B./Physical review. B · 2018 · 59 citations · Full text

Engineering, Topological Materials, Spin Systems +23

Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

I. V. Rozhansky, D. A. Zakheim · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 58 citations

Categoryquantum Electronics, Engineering, Electroluminescence Efficiency +18