D. V. Fateev

Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

V. V. Popov, D. V. Fateev, Taiichi Otsuji et al. · Applied Physics Letters · 2011 · 162 citations · Full text

Plasmonics, Electrical Engineering, Asymmetric Unit Cell +11

Terahertz ratchet effects in graphene with a lateral superlattice

Peter Olbrich, J. Kamann, Matthias König et al. · Physical review. B./Physical review. B · 2016 · 100 citations · Full text

InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging

Takayuki Watanabe, Stephane A. Boubanga-Tombet, Yudai Tanimoto et al. · IEEE Sensors Journal · 2012 · 82 citations

Plasmonic Thz Detection, Electrical Engineering, Terahertz Technology +14

Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stéphane Boubanga Tombet, Yudai Tanimoto et al. · Solid-State Electronics · 2012 · 78 citations

Photonics, Electrical Engineering, Plasmonics +6

Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

D. V. Fateev, V. V. Popov, M. S. Shur · Semiconductors · 2010 · 61 citations