Tomoaki Sawabe - Concepedia

Author

Tomoaki Sawabe

Toshiba (Japan)

Also Known As

T Sawabe, T. Sawabe, Tomoaki Sawabe

Publications

180

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)Konan University Aoyama Gakuin University Chiba University Fukui University of Technology

About

Tomoaki Sawabe is an author at Toshiba (Japan) specializing in engineering, applied physics, and organic electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	121
2	Applied Physics	3	3	70
3	Electrical Engineering	2	2	30
4	Chemical Engineering	1	1	28
5	Chemistry	1	1	28

Tomoaki Sawabe

Publications

139

Citations

H-Index

Page 1

	Year	Citations
The JEM-EUSO Project: Observing Extremely High Energy Cosmic Rays and Neutrinos from the International Space Station Toshikazu Ebisuzaki, Yuriko Uehara, H. Ohmori, Nuclear Physics B - Proceedings Supplements International Space StationEngineeringCosmic Neutrino BackgroundPhysicsLong Baseline Neutrino Experiment	2008	36
Fluorinated Carbazole Derivatives as Wide-Energy-Gap Host Material for Blue Phosphorescent Organic Light-Emitting Diodes Yukitami Mizuno, Isao Takasu, Shuichi Uchikoga, The Journal of Physical Chemistry C EngineeringOrganic ElectronicsChemistryLuminescence PropertyChemical Engineering	2012	28
Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries Tomoaki Sawabe, Koshi Okamura, Tomoki Sueyoshi, Applied Physics A Materials ScienceConducting PolymerGrain BoundariesEngineeringSemiconducting Polymer	2009	27
P‐154L: <i>Late‐News Poster</i> : High‐efficacy OLED Panel with High‐mobility Electron Transport Layers for New Lighting Applications Keiji Sugi, Tomio Ono, Daimotsu Kato, SID Symposium Digest of Technical Papers	2012	18
Performance of a multi-anode photomultiplier employing a weak electrostatic focusing system (Hamamatsu R8900 series) Y. Kawasaki, Hirohiko M. Shimizu, N. Inoue, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment PhotonicsElectrical EngineeringPhotoelectric SensorEngineeringOptical Properties	2006	15
High mobility (>30 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A <i>μ</i>m<sup>−1</sup> off-state leakage current Nobuyoshi Saito, Tomoaki Sawabe, Junji Kataoka, Japanese Journal of Applied Physics SemiconductorsOxide Semiconductor ChannelElectrical EngineeringSemiconductor TechnologyEngineering	2019	15

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