J. Newton

Negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>Properties for Interstitial Boron in Silicon

R.D. Harris, J. Newton, G. D. Watkins · Physical Review Letters · 1982 · 83 citations

Electrical Engineering, Charge Excitations, Single Donor Level +14

Negative-<i>U</i>defect: Interstitial boron in silicon

R.D. Harris, J. Newton, G. D. Watkins · Physical review. B, Condensed matter · 1987 · 79 citations

Engineering, Silicon On Insulator, Novel Optical Deep-level-transient-spectroscopy +16

Negative-U properties of the lattice vacancy in silicon

J. Newton, Ashok Chatterjee, R.D. Harris et al. · Physica B+C · 1983 · 24 citations

Quantum Lattice System, Engineering, Physics +5

Research on stable, high efficiency amorphous silicon multijunction modules

A. Catalano, R.R. Arya, M. Bennett et al. · University of North Texas Digital Library (University of North Texas) · 1992 · 19 citations

Light induced degradation and structure of high efficiency a-Si:H, a-SiGe:H and a-SiC:H solar cells

C.M. Fortmann, J. O’Dowd, J. Newton et al. · AIP conference proceedings · 1987 · 18 citations

Engineering, Photo-electrochemical Cell, Photovoltaic Devices +21