H.‐R. Blank

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

Chi‐Kuang Sun, G. Wang, John E. Bowers et al. · Applied Physics Letters · 1996 · 165 citations

Photonics, Optical Materials, Engineering +14

Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy

Suresh K. Bhargava, H.‐R. Blank, V. Narayanamurti et al. · Applied Physics Letters · 1997 · 53 citations

Engineering, Semiconductor Nanostructures, Tunneling Microscopy +16

Nonequilibrium ac Josephson Effect in Mesoscopic Nb-InAs-Nb Junctions

K. W. Lehnert, Nathan Argaman, H.‐R. Blank et al. · Physical Review Letters · 1999 · 45 citations · Full text

Categoryquantum Electronics, Mesoscopic Nb-inas-nb Junctions, Josephson Junctions +13

Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy

H.‐R. Blank, M. Thomas, K. C. Wong et al. · Applied Physics Letters · 1996 · 40 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Local conduction band offset of GaSb self-assembled quantum dots on GaAs

Mike Rubin, H.‐R. Blank, M. A. Chin et al. · Applied Physics Letters · 1997 · 35 citations

Categoryquantum Electronics, Local Band Offset, Engineering +17