Andreas Mai

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Vlsi Design, Radio Frequency +16

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

Stefan Lischke, Dieter Knoll, Christian Mai et al. · Optics Express · 2015 · 142 citations · Full text

Photonics, Electrical Engineering, Optical Materials +13

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

Mindaugas Lukosius, J. Da̧browski, Julia Kitzmann et al. · ACS Applied Materials & Interfaces · 2016 · 66 citations

A 0.13µm SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Oscillator Gate Delays, Engineering, Vlsi Design +16

Hybrid-Waveguide Ring Resonator for Biochemical Sensing

Patrick Steglich, Claus Villringer, Silvio Pulwer et al. · IEEE Sensors Journal · 2017 · 62 citations

Photonics, Hybrid-waveguide Ring Resonator, Photonic Sensor +15