Toni Lehmann

Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale

Toni Lehmann, M. Trempa, Markus Zschorsch et al. · Acta Materialia · 2014 · 41 citations

Grain Orientations, Wafer Scale Processing, Engineering +10

Structure and dislocation development in mono‐like silicon

Kai Erik Ekstrøm, Gaute Stokkan, Rune Søndenå et al. · physica status solidi (a) · 2015 · 30 citations

Materials Engineering, Materials Science, Low Misorientation +13

Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation

Toni Lehmann, C. Reimann, Jochen Friedrich · Acta Materialia · 2016 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +10

Influence of different seed materials on multi-crystalline silicon ingot properties

C. Reimann, M. Trempa, Toni Lehmann et al. · Journal of Crystal Growth · 2015 · 28 citations

Materials Science, Materials Engineering, Engineering +7

Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots

M. Trempa, I. Kupka, Christian Kranert et al. · Journal of Crystal Growth · 2016 · 27 citations

Materials Science, Materials Engineering, Engineering +10