Q. Han

GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Zhichuan Niu, Shiyong Zhang, H. Q. Ni et al. · Applied Physics Letters · 2005 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes

Donghai Wu, Hao Wang, Bian Wu et al. · Electronics Letters · 2008 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Q. Han, X. H. Yang, Zhichuan Niu et al. · Applied Physics Letters · 2005 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature

H. Q. Ni, Zhichuan Niu, X. H. Xu et al. · Applied Physics Letters · 2004 · 23 citations

Engineering, Materials Engineering, Materials Science +17

The x-ray facilities in-building for calibrations of HXMT

S. Zhang, Yupeng Chen, Yaning Xie et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2014 · 11 citations

Natural Sciences, Astronomy, Physics +17