Dip Das

Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI_3–<i>x</i>Cl_<i>x</i> Perovskite for RRAM Application

Ujjal Das, Dip Das, Bappi Paul et al. · ACS Applied Materials & Interfaces · 2020 · 78 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor

Ujjal Das, Pranab Kumar Sarkar, Dip Das et al. · Advanced Electronic Materials · 2022 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Role of Oxygen Vacancy on the Hydrophobic Behavior of TiO₂ Nanorods on Chemically Etched Si Pyramids

C. P. Saini, A. Roy Barman, Dip Das et al. · The Journal of Physical Chemistry C · 2016 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17

Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories

Dip Das, A. Roy Barman, Santosh Kumar et al. · The Journal of Physical Chemistry C · 2019 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +17

Leaky Integrate‐and‐Fire Model and Short‐Term Synaptic Plasticity Emulated in a Novel Bismuth‐Based Diffusive Memristor

Piotr Zawal, Gisya Abdi, Marlena Gryl et al. · Advanced Electronic Materials · 2024 · 11 citations · Full text

Engineering, Materials Engineering, Materials Science +17