Manoj Kesaria

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Dhafer O. Alshahrani, Manoj Kesaria, Ezekiel A. Anyebe et al. · Advanced Photonics Research · 2021 · 79 citations · Full text

T2sl Pds, Optical Materials, Engineering +18

Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire

Manoj Kesaria, Satish Shetty, S. M. Shivaprasad · Crystal Growth & Design · 2011 · 46 citations

Aluminium Nitride, Engineering, Semiconductor Nanostructures +17

Recent trends in 8–14 μm type-II superlattice infrared detectors

Dominic Kwan, Manoj Kesaria, Ezekiel A. Anyebe et al. · Infrared Physics & Technology · 2021 · 38 citations · Full text

Optical Materials, Engineering, Recent Trends +17

Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)

Manoj Kesaria, S. M. Shivaprasad · Applied Physics Letters · 2011 · 35 citations

Materials Science, Nitrogen Flux Rate, Aluminium Nitride +13

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

H. P. Bhasker, Subhabrata Dhar, A. Sain et al. · Applied Physics Letters · 2012 · 32 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Engineering +15