Hirokuni Asamizu

Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

Hirokuni Asamizu, Makoto Saitô, Kenji Fujito et al. · Applied Physics Express · 2008 · 47 citations

Gallium Nitride Substrates, Wide-bandgap Semiconductor, Engineering +19

Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations

Hisashi Masui, Hirokuni Asamizu, Thiago Melo et al. · Journal of Physics D Applied Physics · 2009 · 43 citations

\Bar1 0, Optical Materials, Engineering +20

High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

Hitoshi Sato, Hirohiko Hirasawa, Hirokuni Asamizu et al. · Journal of Light & Visual Environment · 2008 · 36 citations · Full text

White Oled, Photonics, Electrical Engineering +15

Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures

Hisashi Masui, Hirokuni Asamizu, Anurag Tyagi et al. · Applied Physics Express · 2009 · 30 citations

Optical Materials, Engineering, Optical Polarization +19

Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 1\bar2 2) Plane Gallium Nitrides

Hirokuni Asamizu, Makoto Saitô, Kenji Fujito et al. · Applied Physics Express · 2009 · 27 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14