Concepedia
Statistics
Publications
22
Citations
717
H-Index
16
Active since
1968
Affiliations
Universität Hamburg(Current)
AT&T (United States)
Nokia (United States)
Carl von Ossietzky Universität Oldenburg
R. H. Saul is an author at Universität Hamburg specializing in materials science, engineering, and semiconductor devices.
Publications per year
1968–2000
Effect of a GaAs<i>x</i>P1−<i>x</i> Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs Substrates
R. H. Saul · Journal of Applied Physics · 1969 · 94 citations
Natural Sciences, Materials Engineering, Materials Science +17
GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%
R. H. Saul, J. T. Armstrong, W. H. Hackett · Applied Physics Letters · 1969 · 84 citations
Engineering, Electrical Engineering, Materials Science +17
Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
William A. Brantley, O. G. Lorimor, P.D. Dapkus et al. · Journal of Applied Physics · 1975 · 62 citations
Engineering, Materials Engineering, Materials Science +17
Scanning Electron Microscope Characterization of GaP Red-Emitting Diodes
W. H. Hackett, R. H. Saul, R. W. Dixon et al. · Journal of Applied Physics · 1972 · 60 citations
Surface morphology of liquid-phase epitaxial layers
R. H. Saul, D. D. Roccasecca · Journal of Applied Physics · 1973 · 43 citations
Natural Sciences, Materials Science, Physics +16
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