Justinas Jorudas

Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures

Daniil Pashnev, Tommi Kaplas, V. V. Korotyeyev et al. · Applied Physics Letters · 2020 · 33 citations

Engineering, Thz Radiation, Terahertz Photonics +19

Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

Daniil Pashnev, V. V. Korotyeyev, Justinas Jorudas et al. · Applied Physics Letters · 2020 · 33 citations · Full text

Wide-bandgap Semiconductor, Thz Photonics, Engineering +18

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Pavlo Sai, Justinas Jorudas, Maksym Dub et al. · Applied Physics Letters · 2019 · 28 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Justinas Jorudas, Artūr Šimukovič, Maksym Dub et al. · Micromachines · 2020 · 22 citations · Full text

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

R. B. Adamov, Daniil Pashnev, V. A. Shalygin et al. · Applied Sciences · 2021 · 18 citations · Full text

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +15