Y. H. Lee

Statistics

Publications

Citations

233

H-Index

Active since

1978

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

Y. H. Lee is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, electronic materials, and materials engineering.

Publications per year

1978–1995

Publications

Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of Si

G. S. Oehrlein, R. M. Tromp, J. C. Tsang et al. · Journal of The Electrochemical Society · 1985 · 154 citations

Engineering, Materials Engineering, Materials Science +17

Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy

A. Zaslavsky, K. R. Milkove, Y. H. Lee et al. · Applied Physics Letters · 1995 · 23 citations

Engineering, Materials Engineering, Materials Science +17

High-temperature ion implantation in diamond

Y. H. Lee, P. R. Brosious, J. W. Corbett · physica status solidi (a) · 1978 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +6

Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition

A. Zaslavsky, Detlev Grützmacher, Y. H. Lee et al. · Applied Physics Letters · 1992 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Study of near‐surface disorder and surface residues after reactive Ion etching of Silicon

G. S. Oehrlein, George J. Coyle, J. G. Clabes et al. · Surface and Interface Analysis · 1986 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +17

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