J. G. Grabmaier

Dislocation Etch Pits in Single Crystal GaAs

J. G. Grabmaier, C. Watson · physica status solidi (b) · 1969 · 100 citations

Engineering, Materials Engineering, Materials Science +14

Dislocation-free GaAs by the liquid encapsulation technique

B. C. Grabmaier, J. G. Grabmaier · Journal of Crystal Growth · 1972 · 38 citations

Engineering, Materials Engineering, Materials Science +13

Removal of C/SiC from liquid silicon by directional solidification

A. Mühlbauer, V. Diers, Aaron Walther et al. · Journal of Crystal Growth · 1991 · 37 citations

Engineering, Materials Engineering, Materials Science +14

Suppression of constitutional supercooling in Czochralski-grown paratellurite

J. G. Grabmaier, Ronald D. Plattner, M. Schieber · Journal of Crystal Growth · 1973 · 25 citations

Natural Sciences, Chemistry, Materials Science +10

Hydrogen in phosphorus- and carbon-doped crystalline silicon

A.L. Endrös, W. Krühler, J. G. Grabmaier · Physica B Condensed Matter · 1991 · 21 citations

Engineering, Materials Engineering, Materials Science +12