A. Bousetta

Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition

A. Bousetta, Ming Lü, A. Bensaoula et al. · Applied Physics Letters · 1994 · 202 citations

Materials Science, Semiconductor Device Fabrication, Engineering +15

Physical properties of thin carbon nitride films deposited by electron cyclotron resonance assisted vapor deposition

A. Bousetta, Ming Lü, A. Bensaoula · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1995 · 83 citations

Engineering, Electron Cyclotron Resonance, Chemistry +16

Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition

Ming Lü, A. Bousetta, A. Bensaoula et al. · Applied Physics Letters · 1996 · 69 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment

Ming Lü, A. Bousetta, R. Sukach et al. · Applied Physics Letters · 1994 · 50 citations

Materials Science, Materials Engineering, Cubic Boron +14

Si ultrashallow <i>p</i>+<i>n</i> junctions using low-energy boron implantation

A. Bousetta, Jaap van den Berg, D.G. Armour et al. · Applied Physics Letters · 1991 · 35 citations

Engineering, Optoelectronic Devices, Integrated Circuits +16