A. Bousetta - Concepedia

Author

A. Bousetta

University of Houston

Also Known As

A. BOUSETTA, A. Bousetta, Al Bousetta, Ali Bousetta

Publications

614

Citations

H-Index

Concepts

All Affiliations

University of Houston Ionwerks (United States)University of Salford Philips (Netherlands)

About

A. Bousetta is an author at University of Houston specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	534
2	Applied Physics	9	9	500
3	Chemistry	3	3	354
4	Education	1	1	34
5	Computer Engineering	1	1	34

A. Bousetta

Publications

534

Citations

H-Index

Page 1

	Year	Citations
Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition A. Bousetta, Ming Lü, A. Bensaoula, Applied Physics Letters Materials ScienceSemiconductor Device FabricationEngineeringCarbon-based MaterialNanomaterials	1994	202
Physical properties of thin carbon nitride films deposited by electron cyclotron resonance assisted vapor deposition A. Bousetta, Ming Lü, A. Bensaoula Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringElectron Cyclotron ResonanceChemistryChemical DepositionPhysical Properties	1995	83
Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition Ming Lü, A. Bousetta, A. Bensaoula, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringBoron NitrideEngineering	1996	69
Growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment Ming Lü, A. Bousetta, R. Sukach, Applied Physics Letters Materials ScienceMaterials EngineeringCubic BoronIon ImplantationEngineering	1994	50
Si ultrashallow <i>p</i>+<i>n</i> junctions using low-energy boron implantation A. Bousetta, Jaap van den Berg, D.G. Armour, Applied Physics Letters EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	1991	35
Adaptive sampling methodology for in-line defect inspection A. Bousetta, Andrew Cross EngineeringInspectionMeasurementIndustrial EngineeringIn-line Defect Inspection	2005	34
Ultra low energy (100–2000 eV) boron implantation into crystalline and silicon-preamorphized silicon A. Bousetta, Jaap van den Berg, Řeža Valizadeh, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceSemiconductor TechnologyBoron NitrideElectronic DevicesEngineering	1991	28
The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED W. T. Taferner, A. Bensaoula, E. Kim, Journal of Crystal Growth Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringGan Growth	1996	13
The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED A. Bensaoula, W. T. Taferner, E. Kim, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	1996	10
Investigation of GaN deposition on Si, Al2O3, and GaAs using <i>in</i> <i>situ</i> mass spectroscopy of recoiled ions and reflection high-energy electron diffraction W. T. Taferner, A. Bensaoula, E. Kim, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceWide-bandgap SemiconductorEngineeringCrystalline DefectsPhysics	1996	10

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