Hagyoung Choi

Tuning the Electronic Structure of Tin Sulfides Grown by Atomic Layer Deposition

Giyul Ham, Seokyoon Shin, Joo Hyun Park et al. · ACS Applied Materials & Interfaces · 2013 · 103 citations

Crystal Structure, Tin Sulfides Grown, Engineering +20

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Jae Seok Hur, Min Jae Kim, Seong Hun Yoon et al. · ACS Applied Materials & Interfaces · 2022 · 62 citations

Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

Hagyoung Choi, Seokyoon Shin, Hyeongtag Jeon et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2015 · 42 citations

Thin Film Physics, Optical Materials, Engineering +25

Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition

Sang‐Hun Lee, Hagyoung Choi, Seokyoon Shin et al. · Current Applied Physics · 2013 · 41 citations

Materials Science, Engineering, Oxide Electronics +8

Moisture Barrier Properties of Al₂O₃ Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures

Hagyoung Choi, Sang‐Hun Lee, Hyun-Soo Jung et al. · Japanese Journal of Applied Physics · 2013 · 33 citations

Materials Science, Moisture Barrier Properties, Low Temperatures +11