Govindasamy Rajesh

Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments

Yuko Inatomi, Kaoruho Sakata, M. Arivanandhan et al. · npj Microgravity · 2015 · 32 citations · Full text

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Govindasamy Rajesh, M. Arivanandhan, Hisashi Morii et al. · Journal of Crystal Growth · 2010 · 17 citations

Engineering, X-ray Penetration Method, Dissolution Process +3

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

V. Nirmal Kumar, M. Arivanandhan, Govindasamy Rajesh et al. · npj Microgravity · 2016 · 16 citations · Full text

Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments

Govindasamy Rajesh, M. Arivanandhan, N. Suzuki et al. · Journal of Crystal Growth · 2011 · 14 citations

Engineering, Physics, Applied Physics +5

Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS

M. Arivanandhan, Govindasamy Rajesh, Akira Tanaka et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 2012 · 10 citations