Katherine Price

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS₂ Transistors

Felicia McGuire, Yuh-Chen Lin, Katherine Price et al. · Nano Letters · 2017 · 281 citations

Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts

Zhihui Cheng, Yifei Yu, Shreya Singh et al. · Nano Letters · 2019 · 128 citations · Full text

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

Felicia McGuire, Zhihui Cheng, Katherine Price et al. · Applied Physics Letters · 2016 · 127 citations

Device Modeling, Materials Science, Electrical Engineering +14

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS₂ Using Plasma-Enhanced Atomic Layer Deposition

Katherine Price, Kirstin Schauble, Felicia McGuire et al. · ACS Applied Materials & Interfaces · 2017 · 69 citations

Plasma-Enhanced Atomic Layer Deposition of HfO₂ on Monolayer, Bilayer, and Trilayer MoS₂ for the Integration of High-κ Dielectrics in Two-Dimensional Devices

Katherine Price, Sina Najmaei, Chinedu E. Ekuma et al. · ACS Applied Nano Materials · 2019 · 61 citations

Engineering, Two-dimensional Materials, Peald Plasma Process +20