Kiran Saba

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

Muhammad Usman, Kiran Saba, Dong‐Pyo Han et al. · Superlattices and Microstructures · 2017 · 33 citations

White Oled, Electrical Engineering, Solid-state Lighting +10

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

Muhammad Usman, Kiran Saba, Dong‐Pyo Han et al. · AIP Advances · 2018 · 21 citations · Full text

Photonics, Electrical Engineering, Auger Recombination +15

Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

Muhammad Usman, Kiran Saba, Adnan Jahangir et al. · Acta Mechanica Solida Sinica · 2018 · 21 citations

Electrical Engineering, Internal Quantum Efficiency, Engineering +10

Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer

Muhammad Usman, Urooj Mushtaq, Kiran Saba et al. · Physica E Low-dimensional Systems and Nanostructures · 2018 · 12 citations

Photonics, Electrical Engineering, Solid-state Lighting +9

Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region

Muhammad Usman, Abdur‐Rehman Anwar, Munaza Munsif et al. · Physica E Low-dimensional Systems and Nanostructures · 2019 · 12 citations

White Oled, Photonics, Electrical Engineering +10