Katrin Schulz

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Tunneling of low-frequency waves through the subcrustal lithosphere

Karl Fuchs, Katrin Schulz · 1976 · 85 citations · Full text

Natural Sciences, Earth Sciences, Geophysics +10

Dislocation multiplication by cross-slip and glissile reaction in a dislocation based continuum formulation of crystal plasticity

Markus Sudmanns, Markus Stricker, D. Weygand et al. · Journal of the Mechanics and Physics of Solids · 2019 · 74 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

A 0.13µm SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

Dislocation multiplication in stage II deformation of fcc multi-slip single crystals

Markus Stricker, Markus Sudmanns, Katrin Schulz et al. · Journal of the Mechanics and Physics of Solids · 2018 · 53 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16