Ryan Clarke

Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance

Valerio Adinolfi, Lanxia Cheng, Mario Laudato et al. · ACS Nano · 2019 · 44 citations

Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches

Valerio Adinolfi, Mario Laudato, Ryan Clarke et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 17 citations

Engineering, Emerging Memory Technology, Ald Ternary Germanium-selenium-tellurium +20

ALD GeAsSeTe Ovonic Threshold Switch for 3D Stackable Crosspoint Memory

Mario Laudato, Valerio Adinolfi, Ryan Clarke et al. · 2020 · 13 citations

Engineering, Emerging Memory Technology, Computer Architecture +23

ALD Heterojunction Ovonic Threshold Switches

Valerio Adinolfi, Mario Laudato, Ryan Clarke et al. · ACS Applied Electronic Materials · 2020 · 13 citations

Materials Science, Semiconductors, Electrical Engineering +15

Current limiting contacts for InP transferred electron devices

K.W. Gray, John Pattison, H.D. Rees et al. · 1975 · 11 citations

Electrical Engineering, Engineering, Applied Physics +4