Thomas Auzelle

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

Thomas Auzelle, Benedikt Haas, Albert Minj et al. · Journal of Applied Physics · 2015 · 61 citations

Materials Science, Aluminium Nitride, Aln Buffer +14

Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Thomas Auzelle, Benedikt Haas, M. den Hertog et al. · Applied Physics Letters · 2015 · 55 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Albert Minj, A. Cros, N. Garro et al. · Nano Letters · 2015 · 46 citations

Engineering, Complementary Afms, Gan Self-assembled Nanowires +21

Lifetime Measurements Well below the Optical Diffraction Limit

Sophie Meuret, Luiz H. G. Tizei, Thomas Auzelle et al. · ACS Photonics · 2016 · 44 citations

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Gilles Nogues, Thomas Auzelle, M. den Hertog et al. · Applied Physics Letters · 2014 · 29 citations · Full text

Photoluminescence, Engineering, Electron Microscopy +12