A. H. Kachare - Concepedia

Author

A. H. Kachare

University of Southern California

Also Known As

A. H. Kachare, A. Kachare, A.H. Kachare, Aishwarya Kachare, Kachare, A.

Publications

318

Citations

H-Index

Concepts

All Affiliations

University of Southern California United States Air Force Research Laboratory California State University, Long Beach

About

A. H. Kachare is an author at University of Southern California specializing in engineering, applied physics, and crystalline defects.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	293
2	Applied Physics	10	10	293
3	Natural Sciences	3	3	69
4	Chemistry	2	2	58
5	Education	1	1	40

A. H. Kachare

Publications

293

Citations

H-Index

Page 1

	Year	Citations
Infrared reflection of ion-implanted GaAs A. H. Kachare, W. G. Spitzer, F. Euler, Journal of Applied Physics Materials ScienceInfrared ReflectionElectrical EngineeringIon ImplantationEngineering	1974	51
Refractive index of ion-implanted GaAs A. H. Kachare, W. G. Spitzer, J. E. Fredrickson Journal of Applied Physics Electrical EngineeringIon ImplantationReflection FringesEngineeringPhysics	1976	45
Reliability of classical dispersion analysis of LiF and MgO reflectance data A. H. Kachare, G. Andermann, L. Reed Brantley Journal of Physics and Chemistry of Solids EngineeringSurface ReflectanceMeasurementCalibrationSpectroscopy	1972	40
Ion-implanted nitrogen in gallium arsenide A. H. Kachare, W. G. Spitzer, A. Kahan, Journal of Applied Physics Room TemperatureIon ImplantationEngineeringCrystalline DefectsPhysics	1973	32
An electron microscopy study of the effects of annealing on the defect structure of heavily silicon-doped gallium arsenide Gopal Narayanan, A. H. Kachare physica status solidi (a) EngineeringCrystal Growth TechnologyLattice DefectsSilicon On InsulatorDefect Structure	1974	30
Measurements of layer thicknesses and refractive indices in high-energy ion-implanted GaAs and GaP A. H. Kachare, W. G. Spitzer, J. E. Fredrickson, Journal of Applied Physics High-energy Ion-implanted GaasEngineeringOptoelectronic DevicesIntegrated CircuitsNormal Incidence Reflection	1976	30
Infrared reflection and Raman scattering of ion-implanted nitrogen in gallium phosphide A. H. Kachare, Joel M. Cherlow, TIAN-SHIANG YANG, Journal of Applied Physics Optical MaterialsEngineeringSurface-enhanced Raman ScatteringChemistryIon-implanted Nitrogen	1976	26
Growth of thick liquid-phase epitaxial GaAs : Si layers and their characterization A. H. Kachare, W. G. Spitzer, J. M. Whelan, Journal of Applied Physics EngineeringVibrational ModesOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1976	16
Multiple Czochralski growth of silicon crystals from a single crucible R.L. Lane, A. H. Kachare Journal of Crystal Growth Materials EngineeringMaterials ScienceSingle CrucibleEngineeringCrystal Material	1980	12
Infrared absorption of silicon isotopes in gallium phosphide A. H. Kachare, W. G. Spitzer, O. G. Lorimor, Journal of Applied Physics Local Mode TheoryEngineeringPhysicsCrystalline DefectsNatural Sciences	1974	11

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