G. Lauer

Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

J. Nowak, Ray Robertazzi, J. Z. Sun et al. · IEEE Magnetics Letters · 2016 · 148 citations

Non-volatile Memory, Engineering, Device Size +22

Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions

J. Z. Sun, S. Brown, W. Chen et al. · Physical Review B · 2013 · 110 citations

Magnetic Properties, Engineering, Spin-charge Conversion +18

STT-MRAM with double magnetic tunnel junctions

G. Hu, J. H. Lee, J. Nowak et al. · 2015 · 89 citations

Magnetism, Spintronics, Electrical Engineering +15

2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G. Hu, G. Lauer, J. Z. Sun et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 31 citations

Magnetism, Electrical Engineering, Spintronics +15

Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory

G. Hu, J. Nowak, M. Gottwald et al. · IEEE Magnetics Letters · 2019 · 20 citations

Magnetism, Spintronics, Electrical Engineering +15