G. V. Lashkarev

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

Garry W. Mudd, Simon A. Svatek, Tianhang Ren et al. · Advanced Materials · 2013 · 612 citations · Full text

Structural and morphological properties of ZnO:Ga thin films

Volodymyr Khranovskyy, Ola Nilsen, V. Lazorenko et al. · Thin Solid Films · 2006 · 114 citations

Materials Science, Morphological Properties, Engineering +4

Photoluminescence of two-dimensional GaTe and GaSe films

Osvaldo Del Pozo-Zamudio, Štefan Schwarz, M. Sich et al. · 2D Materials · 2015 · 113 citations · Full text

Semiconductors, Electronic Devices, Engineering +14

Electronic band structure of GaSe(0001):  Angle-resolved photoemission and<i>ab initio</i>theory

Robert L. Johnson, B.J. Kowalski, K. Kopalko et al. · Physical review. B, Condensed matter · 2003 · 71 citations

Engineering, Chemistry, Electronic Structure +20

PEMOCVD of ZnO thin films, doped by Ga and some of their properties

Volodymyr Khranovskyy, V. Lazorenko, G. V. Lashkarev et al. · Superlattices and Microstructures · 2005 · 63 citations

Materials Science, Materials Engineering, Chemical Engineering +9