Juan Gabriel Ramírez

Author

University of California San Diego ORCID

Also Known As

J G Ramírez, J. G. Ramirez, J. G. Ramírez, J. Ramirez, J.-G. Ramirez, J.-G. Ramírez, J.G. Ramirez, J.G. Ramírez, J.‐G. Ramirez, Juan Gabriel Ramirez

125

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

University of California San Diego Universidad de Los Andes Universidad del Valle Centre National de la Recherche Scientifique Université Paris-Sud

About

Juan Gabriel Ramírez is an author at University of California San Diego specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	1.4K
2	Applied Physics	15	21	1.3K
3	Natural Sciences	8	9	318
4	Medicine	2	2	36
5	Biomedical Engineering	1	1	13

Juan Gabriel Ramírez

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Challenges in materials and devices for resistive-switching-based neuromorphic computing Javier del Valle, Juan Gabriel Ramírez, M. J. Rozenberg, Journal of Applied Physics Electrical EngineeringResistive-switching-based Neuromorphic ComputingEngineeringComputational NeuroscienceBioelectronics	2018	239
Nanotextured phase coexistence in the correlated insulator V2O3 Alexander McLeod, Erik van Heumen, Juan Gabriel Ramírez, Nature Physics Materials ScienceMaterial AnalysisEngineeringNanotechnologyOxide Electronics	2016	221
Subthreshold firing in Mott nanodevices Javier del Valle, Pavel Salev, Federico Tesler, Nature EngineeringMott NanodevicesPhysicsNanoelectronicsApplied Physics	2019	215
Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled Junctions Amos Sharoni, Juan Gabriel Ramírez, Iván K. Schuller Physical Review Letters EngineeringCharge TransportMetal-insulator TransitionNanoelectronicsQuantum Materials	2008	152
Control of Multiferroic properties in BiFeO3 nanoparticles Diego Carranza-Célis, Alexander Cardona-Rodríguez, Jackeline Narváez, Scientific Reports	2019	96
Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects Juan Gabriel Ramírez, Thomas Saerbeck, Siming Wang, Physical Review B Materials ScienceSpt TemperaturesEngineeringMaterial AnalysisPhysics	2015	70
Electrical breakdown in a V <sub>2</sub> O <sub>3</sub> device at the insulator-to-metal transition Stefan Guénon, S. Scharinger, Siming Wang, Europhysics Letters (EPL)	2013	54
Control of magnetism across metal to insulator transitions J. de la Venta, Siming Wang, Juan Gabriel Ramírez, Applied Physics Letters Magnetic PropertiesEngineeringInsulator TransitionsMagnetic MaterialsMagnetoresistance	2013	54
Coercivity enhancement in V2O3/Ni bilayers driven by nanoscale phase coexistence J. de la Venta, Siming Wang, Thomas Saerbeck, Applied Physics Letters Magnetic PropertiesEngineeringCoercivity PeakMagnetic ResonanceMagnetoresistance	2014	53
Origin of the current-driven breakdown in vanadium oxides: Thermal versus electronic Ilya Valmianski, Panting Wang, S. Wang, Physical review. B./Physical review. B EngineeringElectronic DevicesNanoelectronicsVanadium DioxideVanadium Oxides	2018	48

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