Concepedia

Yoshiharu Yonai

YY

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Publications

2

Citations

76

H-Index

2

Active since

2011

Affiliations

Tokyo Institute of Technology(Current)

Yoshiharu Yonai is an author at Tokyo Institute of Technology specializing in materials science, semiconductor devices, and thin-film transistors.

Publications per year

2011–2011

2

Publications

2

High drain current (>2A/mm) InGaAs channel MOSFET at V<inf>D</inf>=0.5V with shrinkage of channel length by InP anisotropic etching

Yoshiharu Yonai, Toru Kanazawa, Shunsuke Ikeda et al. · 2011 · 41 citations

, , +11

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al<sub>2</sub>O<sub>3</sub>Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Ryousuke Terao, Toru Kanazawa, Shunsuke Ikeda et al. · Applied Physics Express · 2011 · 35 citations

, , +17

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