S. Mesters

Size distribution of Ge islands grown on Si(001)

Michael Goryll, L. Vescan, K. Schmidt et al. · Applied Physics Letters · 1997 · 106 citations

Materials Science, Engineering, Dislocation Interaction +15

Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

S. Mantl, B. Holländer, R. Liedtke et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 57 citations

Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique

Michael J. Schöning, Constance Schmidt, J. Schubert et al. · Sensors and Actuators B Chemical · 2000 · 55 citations

Materials Science, Thin Film Sensors, Engineering +10

Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation

B. Holländer, S. Mantl, R. Liedtke et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 54 citations

Chemical vapor deposition of silicon–germanium heterostructures

S Bozzo, J.‐L. Lazzari, C. Coudreau et al. · Journal of Crystal Growth · 2000 · 35 citations

Materials Science, Engineering, Applied Physics +3