F. Agahi

Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

S. K. Guha, F. Agahi, B. Pezeshki et al. · Applied Physics Letters · 1996 · 59 citations

Oxide Heterostructures, Materials Science, Oxide Phase +10

Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers

J.-X. Yang, F. Agahi, De-Chang Dai et al. · IEEE Transactions on Microwave Theory and Techniques · 1993 · 50 citations

Thz Photonics, Terahertz Technology, Engineering +17

Recombination in GaAs at the AlAs oxide-GaAs interface

J. A. Kash, B. Pezeshki, F. Agahi et al. · Applied Physics Letters · 1995 · 28 citations

Aluminium Nitride, Semiconductor Technology, Electrical Engineering +11

High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes

F. Agahi, Kei May Lau, H. K. Choi et al. · IEEE Photonics Technology Letters · 1995 · 28 citations

Semiconductor Technology, Photonics, Electrical Engineering +13

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Daniel C. Bertolet, Jung-Kuei Hsu, F. Agahi et al. · Journal of Electronic Materials · 1990 · 15 citations

Materials Science, Critical Thickness, Engineering +5