J. B. Shaw

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

Christopher L. Hinkle, Rohit Galatage, R. A. Chapman et al. · Applied Physics Letters · 2010 · 30 citations

Metal/dielectric Interface, Engineering, Oxidation Resistance +18

<i>Ab initio</i>calculations for industrial materials engineering: successes and challenges

E. Wimmer, Reza Amini Najafabadi, George A. Young et al. · Journal of Physics Condensed Matter · 2010 · 19 citations

Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition

Christopher L. Hinkle, Rohit Galatage, R. A. Chapman et al. · Applied Physics Letters · 2012 · 16 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Characterization of copper voids in dual damascene processes

R.L. Guldi, J. B. Shaw, J. Ritchison et al. · 2003 · 15 citations

Engineering, Integrated Circuits, Chemical Deposition +16

Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt

Christopher L. Hinkle, Rohit Galatage, R. A. Chapman et al. · 2010 · 13 citations

Engineering, Vlsi Design, Oxidation Resistance +16