Tsung‐Kuei Kang

Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Cheng‐Li Lin, Chi-Chang Tang, Shu-Ching Wu et al. · Microelectronic Engineering · 2015 · 41 citations

Materials Engineering, Materials Science, Electrical Engineering +10

Fabrication and characterization of sputtered Mg and F co-doped ZnO thin films with different substrate temperature for silicon thin-film solar cell applications

Fang-Hsing Wang, Maoshan Chen, Yeu-Long Jiang et al. · Journal of Alloys and Compounds · 2021 · 30 citations

Materials Science, Materials Engineering, Material Analysis +9

Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

Cheng‐Li Lin, Wei-Yi Chang, Yen-Lun Huang et al. · Japanese Journal of Applied Physics · 2015 · 24 citations

Engineering, Emerging Memory Technology, Phase Change Memory +17

A novel LTPS-TFT-based charge-trapping memory device with field-enhanced nanowire structure

Ta‐Chuan Liao, Shengkai Chen, Ming Yu et al. · 2009 · 17 citations

Non-volatile Memory, Electrical Engineering, Thin-film Transistor +11

Electrical characteristics and TDDB breakdown mechanism of N2-RTA-treated Hf-based high-κ gate dielectrics

Cheng‐Li Lin, Mei-Yuan Chou, Tsung‐Kuei Kang et al. · Microelectronic Engineering · 2011 · 16 citations

Electrical Characteristics, Electrical Engineering, Semiconductor Device +6