D. J. Backlund

Nickel: A very fast diffuser in silicon

Jeanette Lindroos, David P. Fenning, D. J. Backlund et al. · Journal of Applied Physics · 2013 · 105 citations

Miniaturization, Engineering, Optoelectronic Devices +16

Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

D. J. Backlund, S. K. Estreicher · Physical Review B · 2010 · 50 citations

Materials Science, Math Xmlns, Semiconductor Technology +14

Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

Alexandra Carvalho, D. J. Backlund, S. K. Estreicher · Physical Review B · 2011 · 34 citations

Engineering, Cu-photoluminescence Defect, Chemistry +16

Activation Energies for Diffusion of Defects in Silicon: The Role of the Exchange‐Correlation Functional

S. K. Estreicher, D. J. Backlund, Christian Carbogno et al. · Angewandte Chemie International Edition · 2011 · 33 citations

Hydrogen in C‐rich Si and the diffusion of vacancy–H complexes

S. K. Estreicher, Andris Doçaj, Małgorzata Bebek et al. · physica status solidi (a) · 2012 · 29 citations

Engineering, Chemistry, Silicon On Insulator +16