N. Raigoza

Effects of hydrostatic pressure and aluminum concentration on the conduction-electron<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields

E. Reyes‐Gómez, N. Raigoza, L. E. Oliveira · Physical Review B · 2008 · 76 citations · Full text

Wide-bandgap Semiconductor, Hydrostatic Pressure, Engineering +9

Effects of hydrostatic pressure on donor states in symmetrical GaAs–Ga0.7Al0.3As double quantum wells

N. Raigoza, A. L. Morales, C.A. Duque · Physica B Condensed Matter · 2005 · 55 citations

Semiconductors, Semiconductor Technology, Hydrostatic Pressure +7

Donor‐related density of states and polarizability in a GaAs‐(Ga, Al)As quantum‐well under hydrostatic pressure and applied electric field

A. L. Morales, Andrés Julián Saavedra‐Montes, Sonia López et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 53 citations · Full text

Semiconductors, Quantum Science, Electrical Engineering +15

Impurity-related polarizability and photoionization-cross section in double quantum wells under electric fields and hydrostatic pressure

A. L. Morales, N. Raigoza, E. Reyes‐Gómez et al. · Superlattices and Microstructures · 2009 · 32 citations

Quantum Science, Hydrostatic Pressure, Engineering +10

Correlated electron–hole transition energies in quantum-well wires: Effects of hydrostatic pressure

N. Raigoza, C.A. Duque, N. Porras‐Montenegro et al. · Physica B Condensed Matter · 2005 · 32 citations

Quantum Science, Hydrostatic Pressure, Electron–hole Transition Energies +8