A. Botcharev

Electron velocity overshoot and nonequilibrium phonons in a GaAs-based<i>p</i>-<i>i</i>-<i>n</i>nanostructure studied by transient subpicosecond Raman spectroscopy

E. D. Grann, K. T. Tsen, D. K. Ferry et al. · Physical review. B, Condensed matter · 1996 · 29 citations

Semiconductors, Electrical Engineering, Different Electron Densities +13

Electron velocity overshoot in a GaAs-based <i>p</i>-<i>i</i>-<i>n</i> nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

E. D. Grann, K. T. Tsen, Otto F. Sankey et al. · Applied Physics Letters · 1995 · 26 citations

Semiconductors, Electron Velocity Overshoot, Electrical Engineering +13

Characterization of flicker noise in GaN-based MODFET's at low drain bias

W. Ho, C. Surya, Wook Kim et al. · IEEE Transactions on Electron Devices · 1999 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Systematic Dependencies +14

Transient picosecond Raman studies of high-field electron transport in GaAs-based<i>p</i>-<i>i</i>-<i>n</i>nanostructure semiconductors

E. D. Grann, S.-J. Sheih, K. T. Tsen et al. · Physical review. B, Condensed matter · 1995 · 21 citations

Semiconductors, Electron Density, Electrical Engineering +12

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based <i>p</i>-<i>i</i>-<i>n</i> nanostructure semiconductors

E. D. Grann, S.-J. Sheih, C. H. Chia et al. · Applied Physics Letters · 1994 · 18 citations

Categoryquantum Electronics, Engineering, Semiconductor Physics +19