Zhaole Su

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Yangfeng Li, Xiaotao Hu, Yimeng Song et al. · Vacuum · 2021 · 25 citations

Categoryiii-v Semiconductor, Applied Physics, Vicinal Sapphire Substrate +1

The role of AlN thickness in MOCVD growth of N-polar GaN

Yangfeng Li, Xiaotao Hu, Yimeng Song et al. · Journal of Alloys and Compounds · 2021 · 22 citations

Materials Science, Materials Engineering, Electrical Engineering +10

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Yangfeng Li, Xiaotao Hu, Yimeng Song et al. · Materials Science in Semiconductor Processing · 2021 · 13 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +5

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Zhaole Su, Rui Kong, Xiaotao Hu et al. · Vacuum · 2022 · 11 citations

Materials Science, Aluminium Nitride, Electrical Engineering +10

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Yangfeng Li, Cui Liu, Yuli Zhang et al. · Materials · 2022 · 10 citations · Full text