Santosh Kumar Vishvakarma

Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

Vikas Vijayvargiya, Santosh Kumar Vishvakarma · IEEE Transactions on Nanotechnology · 2014 · 173 citations

Device Modeling, Santa Clara, Electrical Engineering +12

A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

C. B. Kushwah, Santosh Kumar Vishvakarma · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2015 · 98 citations

Non-volatile Memory, Electrical Engineering, Memory Architecture +13

Automated System for Epileptic EEG Detection Using Iterative Filtering

Rishi Raj Sharma, Piyush Varshney, Ram Bilas Pachori et al. · IEEE Sensors Letters · 2018 · 92 citations

Engineering, Feature Extraction, Automated System +18

Analytical modeling of split-gate junction-less transistor for a biosensor application

Shradhya Singh, Balwinder Raj, Santosh Kumar Vishvakarma · Sensing and Bio-Sensing Research · 2018 · 74 citations · Full text

An improved read-assist energy efficient single ended P-P-N based 10T SRAM cell for wireless sensor network

Prachi Sanvale, Neha Gupta, Vaibhav Neema et al. · Microelectronics Journal · 2019 · 67 citations