T. R. Gow

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Decomposition of trimethylgallium on Si(100): Spectroscopic identification of the intermediates

F. Lee, A. L. Backman, Riyi Lin et al. · Surface Science · 1989 · 66 citations

Inorganic Chemistry, Chemical Engineering, Spectroscopic Identification +6

Ammonia adsorption and decomposition on several faces of platinum

John M. Gohndrone, C. W. Olsen, A. L. Backman et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 57 citations

Engineering, Chemistry, Chemical Engineering +17