J. Osaka

Oxide Micro‐Precipitates in As‐Grown CZ Silicon

Noriyuki Inoue, J. Osaka, Kenji Wada · Journal of The Electrochemical Society · 1982 · 63 citations

Materials Science, Engineering, Oxide Micro‐precipitates +9

In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopy

J. Osaka, N. Inque, Yuji Mada et al. · Journal of Crystal Growth · 1990 · 47 citations

Materials Science, Surface Characterization, Engineering +9

Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy

J. Osaka, Yutaka Ohno, S Kishimoto et al. · Applied Physics Letters · 2005 · 46 citations

Materials Engineering, Deep-level Transient Spectroscopy, Electrical Engineering +14

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopy

Koji Yamada, Naoya Inoue, J. Osaka et al. · Applied Physics Letters · 1989 · 44 citations

Semiconductors, Materials Science, Wide-bandgap Semiconductor +13

Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

J. Osaka, M. Kumar, Hirotaka Toyoda et al. · Applied Physics Letters · 2007 · 35 citations

Wide-bandgap Semiconductor, Electrical Engineering, Appearance Mass Spectrometry +13