Aoi Morishita

C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability

Te Bi, Yuhao Chang, Wenxi Fei et al. · Carbon · 2021 · 40 citations

Electrical Engineering, Engineering, Bias Temperature Instability +4

Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts

Shoichiro Imanishi, Ken Kudara, Hitoshi Ishiwata et al. · IEEE Electron Device Letters · 2020 · 39 citations

Semiconductor Technology, Diamond-like Carbon, Electrical Engineering +10

Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

Ken Kudara, Masakazu Arai, Yukiko Suzuki et al. · Carbon · 2021 · 19 citations

Regrown Source/drain, Electrical Engineering, Engineering +4

580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P⁻-Drift Layer

Jun Tsunoda, Naoya Niikura, Kosuke Ota et al. · IEEE Electron Device Letters · 2021 · 15 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure

Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki et al. · Scientific Reports · 2019 · 14 citations · Full text