Concepedia

T. Higashino

TH

Statistics

Publications

5

Citations

62

H-Index

5

Active since

1999

Affiliations

Osaka Prefecture University(Current)

T. Higashino is an author at Osaka Prefecture University specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1999–2002

5

Publications

5

Molecular Beam Epitaxial Growth and Characterization of GaAs<sub>1-<i>y</i></sub>Sb<sub><i>y</i></sub>Layers on (111)B InP Substrates

T. Higashino, Yuichi Kawamura, Masato Fujimoto et al. · Japanese Journal of Applied Physics · 2002 · 15 citations

Engineering, Materials Science, Physics +17

Band-Gap Change in Ordered/Disordered GaAs1-ySby Layers Grown on (001) and (111)B InP Substrates

Yuichi Kawamura, Akiko Gomyo, T. Suzuki et al. · Japanese Journal of Applied Physics · 2002 · 13 citations

Natural Sciences, Materials Science, Physics +17

Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rate

Katsuto Tanahashi, M Kikuchi, T. Higashino et al. · Journal of Crystal Growth · 2000 · 12 citations

Engineering, Materials Engineering, Materials Science +17

Work function of GaAs (0 0 1) surface obtained by the electron counting model

Naoya Inoue, T. Higashino, Katsuto Tanahashi et al. · Journal of Crystal Growth · 2001 · 11 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Concentration of point defects in growing CZ silicon crystal under the internal stresses: effects of impurity doping and thermal stress

Katsuto Tanahashi, M Kikuchi, T. Higashino et al. · Physica B Condensed Matter · 1999 · 11 citations

Engineering, Materials Engineering, Materials Science +17

1–5 of 5