Concepedia

Akihisa Sai

AS

Statistics

Publications

4

Citations

165

H-Index

4

Active since

1996

Affiliations

Toyota Technological Institute(Current)

Japan Atomic Energy Agency

Japan Synchrotron Radiation Research Institute

Akihisa Sai is an author at Toyota Technological Institute specializing in semiconductor materials, materials science, and strain relaxation.

Publications per year

1996–2010

4

Publications

4

Large volume CdWO4 crystal scintillators

S. Burachas, F.A. Danevich, A.Sh. Georgadze et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1996 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +8

<i>In situ</i>Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms

Takuo Sasaki, Hidetoshi Suzuki, Akihisa Sai et al. · Applied Physics Express · 2009 · 42 citations

Natural Sciences, Materials Science, Physics +17

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth

Hidetoshi Suzuki, Takuo Sasaki, Akihisa Sai et al. · Applied Physics Letters · 2010 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Takuo Sasaki, Hidetoshi Suzuki, Akihisa Sai et al. · Journal of Crystal Growth · 2010 · 20 citations

Natural Sciences, Materials Science, Physics +14

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