Kiryong Kim

0.293-mm² Fast Transient Response Hysteretic Quasi-<inline-formula> <tex-math notation="LaTeX">$V^{2}$ </tex-math> </inline-formula> DC–DC Converter With Area-Efficient Time-Domain-Based Controller in 0.35-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>m CMOS

Dong‐Hoon Jung, Kiryong Kim, Sunghwan Joo et al. · IEEE Journal of Solid-State Circuits · 2018 · 30 citations

Constant Switching Frequency, Electrical Engineering, Engineering +15

Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation

Kyoman Kang, Hanwool Jeong, Younghwi Yang et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2015 · 21 citations

Non-volatile Memory, Engineering, Vlsi Design +20

SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling

Keonhee Cho, Hee Kyoung Choi, In-Jun Jung et al. · IEEE Journal of Solid-State Circuits · 2022 · 19 citations

An Energy-Efficient Design of TSV I/O for HBM With a Data Rate up to 10 Gb/s

Ji Young Kim, Taeryeong Kim, Jeonghyeok You et al. · IEEE Journal of Solid-State Circuits · 2023 · 18 citations

Area- and Energy-Efficient STDP Learning Algorithm for Spiking Neural Network SoC

Giseok Kim, Kiryong Kim, Sara Choi et al. · IEEE Access · 2020 · 14 citations · Full text

Spike-time Dependent Plasticity, Engineering, Machine Learning +17