L. Di Gaspare

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 1998 · 248 citations

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

Lorenzo Colace, G. Masini, F. Galluzzi et al. · Conference on Lasers and Electro-Optics Europe · 1998 · 204 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Ge–Si intermixing in Ge quantum dots on Si(001) and Si(111)

F. Boscherini, Giovanni Capellini, L. Di Gaspare et al. · Applied Physics Letters · 2000 · 130 citations

Materials Science, Semiconductors, Ge Quantum Dots +14

Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition

Giovanni Capellini, L. Di Gaspare, F. Evangelisti et al. · Applied Physics Letters · 1997 · 80 citations

Engineering, Crystal Growth Technology, Vacuum Device +16

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

A.M. Scaparro, Vaidotas Mišeikis, Camilla Coletti et al. · ACS Applied Materials & Interfaces · 2016 · 52 citations · Full text

Materials Science, Graphene Nanomeshes, Graphene Quantum Dot +15